csemi-conaucioi ^pioaucti, una. 20 stern ave. springfield, new jersey 07081 u s a mje1090 .hn, mje1093 pnp mje2090ri,n,mje2093 mje1100>hromje1103npn mje2100*,umje2103 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 plastic medium-power complementary silicon transistors designed for use in driver and output stages in complementary audio amplifier applications. ? high dc current gain - hpe = 750 (mini @ iq * 3.0 and 40 adc ? true three lead monolithic construction - emitter-base resistors to prevent leakage multiplication are built in. ? available in two packages ? case 90 or case 199 maximum ratings thermal characteristics charmuriltic thermal rniitince. junction to c?m symbol ?jc pp. power dissipation watts) = s k g s s s s s mai 1.8 unit c/w figure 1 - power derating x \ - n n > x n n 20 ?l> 60 80 100 120 140 in tc. ca5f temperature (c) 5.0 ampere darlington power transistors complementary silicon 60-80 volts 70 watts rating collector-emitter voltage collector-bate voltage emitter-bate voltage collector current beie current total device dunpation 9 tc ? 25c derate above 2sc operating end storage junction temperatmg range symbol vceo vcb veb 'c ib >0 tj. t,,, mje10m mje1091 mje1100 mje1101 mje2obo mje2091 mje2100 mje2101 60 60 mje1092 MJE10B3 mje11o2 mje11o3 mje20s2 mje2ob3 mje2102 mje2103 bo | 80 50 50 0,1 70 056 -55 to* 150 unit vdc vdc vdc adc adc watt! w/c c mje1090 mje1091 mje1092 mje1093 mje1100 mje1101 mje1102 mje11o3 case 90-05 mje20so mje20s1 mje20sj mj62093 mje2100. mue2101 mje2102 mjej103 case 199-04 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use, nj semi-conductors encourages customers to verity that datasheets nre current before placing orders. quality semi-conductors
mje1090 thru mje1093 pnp/mje1100 thru mje1103 npn (continued) mje2090thru mje2093 pnp/mje2100 thru mje2103 npn electrical characteristics itc ' 35c unim oth?w? noted) chtracwmie i symbol min off characteristics colkctor-erninv brwkdown volu?t?l (lc- 100 madc, ib -01 mje1090, mje1091, mje1100. mje1101 mje2090, mje2091, mje 2100. mje2101 mje1092, mje1093, mj61102. mje1103 mje2092, mje2093, mje2102, mje2103 coltktor cutoff current ivce-30ve ' 0' 6bo 60 60 80 60 - - - ? mix ] unit | - : 5oo 500 500 500 0.2 2.0 2.0 vdc uadc rnadc madc on characteristics hi dc current giin (1c - 3.0 adc. vce "3.0 vdc) mje 1090, mje 1o92, mje 1100. mje 1102 mje 2090, mje2092, mje2100. mje2102 (1c - 4.0 adc, vce - 3.0 vdc) mje1091. mje 1093, mje1101, mje 1103 mje2091. mje s093, mje210v mje 2 103 collktor-emitttr saturation voltag* iic -3.0 adc, ib - 12 madc) mje 1090. mje 1092, mje 1100, mje 1102 mje2090, mje 2092. mje2100, mje2102 (1c- 4.0 adc, ib" 16 madc) mje 1091, mje 1093, mje 1101, mje 1103 vue2091. mjp2093. mje2101. mjejjffi) ^ bim-emitur on valtagt ((c ? 3.0 adc, vce -s.ovdcl mje 1090, mje 1092, mje 1)00, mje 1102 mje2090. mje2092. mje2100. mje2102 dc - 4.0 adc. vce ' 3.0 vdc) mje1091. mjei093. mje 1 101, mje 1 103 mje2091, mje2093. mje2101, mje2103 hfe vcei?i) vbe(on) 750 |_ '50 i 750 750 - - _ - - 2.5 ._ _2,5 2.8 2.8 2.5 2.5 2.b 2.5 - vdc vdc dynamic characteristics snull-signd currtnt gain dc - 3.0 adc. vce - 3.0 vdc, f - 1 .0 mhz) hf. 1.0 - - <"puli? t.,i pull. width < 300 ia. duty cycl* < 20% figure 2 - dc safe operating area _1'.^_ t ?c?idi bmflta andirv c'2s? ur> ly l wir c tak miw li '? 1 dom out niud ::i==: t v x- hnitfd t ? k"( -- mje ion.: 'l = -- mjemoo.!)! i" mje2ioo.oi '" mje1w.93 1 -- mje2092.j3 (~ ?ucnm.ra i v i? ?? ?= \ r^~ =a_ \ a i.a 3.0 so it ' the transistor that must be observed for reliable operation, eg , the transistor must not be subjected to greater dissipation than the curves indicate. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. (see an-415) e. couectow emitter voltage [volts! figure 3 - darlington circuit schematic thru mje10i3 ( mjc2mq . thru 1 mjc2qb3 . ._k n?^ , % 10 k r r s ' * 150 i 1 t mje1100 saw 0-4 thru mje1103 mj2100
mje1090 thru mje1093 pnp/mje1100 thru mje1103 npn (continued) mje2090 thru mje2093 pnp/mje2100 thru mje2103 npn mje 1090 mje 1091 mje 1o92 mje 1093 mje 1100 -*- mjc 1101 mje 1 1o2 mje 1 103 ? ? ? --a- u r* iv ii hgh ^ dim a c d f r, h j k m 'r~ ^ t" 1^ 3 millin min 16.13 1257 j.i8 1.09 351 ? ? 2.67 0.913 15 11 9 "v.?tl ,f 0 i i ih 4 eters max 1638 12.83 3.43 124 3.76 bsc 2.92 0864 1638 2.16 m \ k, style 2: pin 1. emitter !. collector 3. base inches min 0.635 0.495 0.043 0.138 0.18 0.105 o.oj5 0.595 9" 0.075 max 0.645 0.505 0.049 0.148 bsc 0.115 0.034 o.m5 0085 u b.? t.? a.in o.ns ote 1 leads within 005" rao qf tr ue position (tpiatmmc case 90-05 mje2090 mje 2091 mje 2092 mje2093 mje 2 100 mje21o1 ( mje21d2 mje21o3 1. 1 d l ? b ? ~%&)!f t jt ?it? rr qlt~ t t - a k """ _i style 1 pim ^^^-f dim a b f d f b h j k l m ^-~ r s t u millimeters min 16.08 12.57 3 18 0.51 3.61 2.54 2.67 0.43 14.73 216 3? t 4? 4.78 1.91 0.81 s.99 6.22 max 1633 12.83 343 0.76 3.86 bst 2.92 0.89 14.93 2.41 w 1 73 5.03 2.16 u.oti 7.24 6.48 2 3 m ^ t ? s ? j base collector emitter inches mln 0.633 0.495 0125 0.020 0.142 u 10 0.10s 0.017 0.580 0.085 3 qqm 0.1 0.11 * 75 o.oaj 0.275 0.245 max 0.643 0.50s 0 135 0.030 0.152 bsc 0.115 0.027 0.590 0.096 typ q06b 0.085 6.034 0.285 d.?5 qim "g" is to center line of leads. case 199-04
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